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Abstract
Thermal behavior of semiconductor bismuth tri-sulphide [Bi2S3] crystals
grown by silica gel
T. K. Patil
The Bismuth Tri-Sulphide [Bi2S3] crystals have been grown in Sodium-Metasilicate gel using the single diffusion
method at room temperature. The grown crystals were characterized by thermo analytical techniques (TGA, DTA,
DTG and DSC), X-ray powder diffraction (XRD), By powder X-ray diffraction analysis the crystal structure is
confirmed to be Orthorhombic or Rhombus, having lattice parameters a = 11.136 A????°, b = 11.256 A????°, and c = 3.968 A????°
. Thermal study reveals that Bismuth Tri-Sulphide crystal is Di-hydrous. TGA, DTA, DTG and DSC analysis shows
a remarkable thermal stability.
